PART |
Description |
Maker |
HY27LF081G2M-TCP HY27LF081G2M-TCS HY27LF161G2M-TCB |
Inductor; Inductor Type:Power; Inductance:2uH; Inductance Tolerance: 25 %; Series:CTX; Package/Case:PCB Surface Mount; Core Material:Amorphous Metal; Current, lt rms Parallel:7.26A; Current, lt rms Series:3.63A RoHS Compliant: Yes 3.3V Differential Transceiver 8-PDIP -40 to 85 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 1Gbit的(128Mx8bit / 64Mx16bit)NAND闪存 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 128M X 8 FLASH 1.8V PROM, 30 ns, PDSO48 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 64M X 16 FLASH 1.8V PROM, 30 ns, PDSO48 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 64M X 16 FLASH 3.3V PROM, 30 ns, PDSO48 CONNECTOR ACCESSORY 128M X 8 FLASH 3.3V PROM, 30 ns, PDSO48 CONNECTOR ACCESSORY 64M X 16 FLASH 1.8V PROM, 30 ns, PDSO48 Power Heater Soldering Tip; Tip/Nozzle Style:Chisel; Tip/Nozzle Thickness:0.2"; Tip/Nozzle Size:0.40 1Gbit的(128Mx8bit / 64Mx16bit)NAND闪存 COILTRONICS RoHS Compliant: Yes 1Gbit的(128Mx8bit / 64Mx16bit)NAND闪存 Power Heater Soldering Tip; Tip/Nozzle Style:Chisel; Tip/Nozzle Thickness:0.1"; Tip/Nozzle Size:0.43 RoHS Compliant: Yes 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
|
Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
K9F3208W0A- K9F3208W0A-TCB0 K9F3208W0A-TIB0 K9F400 |
512K x 8 bit NAND Flash Memory 4M x 8 Bit NAND Flash Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
MT29F8G08DAAWCA MT29F8G08BAAWPA |
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory 1G X 8 FLASH 2.7V PROM, 30 ns, PDSO48
|
Micron Technology
|
HY27UA081G1M HY27SA1G1M HY27SA161G1M-TPCB |
(HY27SAxxx) 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 64M X 16 FLASH 1.8V PROM, 12000 ns, PDSO48
|
Hynix Semiconductor Inc.
|
AT49F8192 AT49F8192- AT49F8192T-90TI AT49F8192-12R |
8-Megabit 512K x 16 5-volt Only CMOS Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO48 8-Megabit 512K x 16 5-volt Only CMOS Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO44 Quadruple 2-Input Positive-NAND Gate 14-TSSOP -40 to 125
|
Atmel, Corp. Atmel Corp. ATMEL[ATMEL Corporation]
|
K9NBG08U5M |
NAND Flash Memory
|
Samsung
|
MT29F4G08AAA |
NAND Flash Memory
|
Micron
|
MT29F8G08AAAC4 MT29F8G08AAAC6 MT29F16G08DAAWP |
NAND Flash Memory
|
Micron
|
K9F6408U0M-TCB0 K9F6408U0M-TIB0 |
8M x 8 Bit NAND Flash Memory
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
KM29W32000TS |
4M x 8-Bit NAND Flash Memory
|
Samsung Semiconductor
|
K9F6408U0C-V |
8M x 8 Bit NAND Flash Memory
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|